Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

摘要

An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.