发明名称 |
Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
摘要 |
A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MC) (mass %) of the colloidal silica (C) satisfying the relationship "MA/MC=0.0001 to 0.003", and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.
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申请公布号 |
US8480920(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US20100749934 |
申请日期 |
2010.03.30 |
申请人 |
SHIDA HIROTAKA;TAKEMURA AKIHIRO;ABE TAICHI;JSR CORPORATION |
发明人 |
SHIDA HIROTAKA;TAKEMURA AKIHIRO;ABE TAICHI |
分类号 |
C09G1/02 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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