发明名称 Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
摘要 A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MC) (mass %) of the colloidal silica (C) satisfying the relationship "MA/MC=0.0001 to 0.003", and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.
申请公布号 US8480920(B2) 申请公布日期 2013.07.09
申请号 US20100749934 申请日期 2010.03.30
申请人 SHIDA HIROTAKA;TAKEMURA AKIHIRO;ABE TAICHI;JSR CORPORATION 发明人 SHIDA HIROTAKA;TAKEMURA AKIHIRO;ABE TAICHI
分类号 C09G1/02 主分类号 C09G1/02
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