发明名称 Bonding structure and semiconductor device manufacturing apparatus
摘要 A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.
申请公布号 US8480806(B2) 申请公布日期 2013.07.09
申请号 US20090349693 申请日期 2009.01.07
申请人 NAKAMURA TAICHI;TAKEBAYASHI HIROSHI;FUJII TOMOYUKI;NGK INSULATORS, LTD. 发明人 NAKAMURA TAICHI;TAKEBAYASHI HIROSHI;FUJII TOMOYUKI
分类号 B32B37/00;B23B31/28;C23C16/00 主分类号 B32B37/00
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