发明名称 |
Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode |
摘要 |
Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.
|
申请公布号 |
US8483251(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US201113294378 |
申请日期 |
2011.11.11 |
申请人 |
ENYA YOHEI;YOSHIZUMI YUSUKE;KYONO TAKASHI;AKITA KATSUSHI;UENO MASAKI;SUMITOMO TAKAMICHI;NAKAMURA TAKAO;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ENYA YOHEI;YOSHIZUMI YUSUKE;KYONO TAKASHI;AKITA KATSUSHI;UENO MASAKI;SUMITOMO TAKAMICHI;NAKAMURA TAKAO |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|