| 发明名称 |
Method of manufacturing semiconductor device, semiconductor device and semiconductor composite device |
| 摘要 |
A method for manufacturing a semiconductor device, includes: a step of etching a Si (111) substrate along a (111) plane of the Si (111) substrate to separate a Si (111) thin-film device having a separated surface along the (111) plane.
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| 申请公布号 |
US8481342(B2) |
申请公布日期 |
2013.07.09 |
| 申请号 |
US20100730826 |
申请日期 |
2010.03.24 |
| 申请人 |
OGIHARA MITSUHIKO;SAGIMORI TOMOHIKO;SUZUKI TAKAHITO;MUTO MASATAKA;OKI DATA CORPORATION |
发明人 |
OGIHARA MITSUHIKO;SAGIMORI TOMOHIKO;SUZUKI TAKAHITO;MUTO MASATAKA |
| 分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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