发明名称 |
PHOTOSENSITIVE NOVOLAK RESIN, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION INCLUDING SAME, PHOTOSENSITIVE RESIN LAYER PREPARED BY USING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE PHOTOSENSITIVE RESIN LAYER |
摘要 |
<p>PURPOSE: A photosensitivity novolak resin is provided to apply to a positive photosensitive resin composition as highly efficient photoresist to produce positive photosensitive resin composition with excellent sensitivity and high residual film rate. CONSTITUTION: A photosensitivity novolak resin comprises a structure unit of the following chemical formula 1 and a structure unit of the following chemical formula 2. The R^11 and the R^12 are independently hydrogen or a quinone diazide sulfonyl group. Fifty or more percent of the R^11 and the R^12 in the photosensitivity novolak resin is quinone diazide sulfonyl groups. The R^13 and the R^14 are Independently C1-7 alkyl groups. When the number of structure unit in the photosensitivity novolak resin is x and the number of structure unit in the chemical formula 2 is y, x+y is within the range of 2-30 and x / (x+y) is within the range of 0.6-0.95.</p> |
申请公布号 |
KR20130077466(A) |
申请公布日期 |
2013.07.09 |
申请号 |
KR20110146190 |
申请日期 |
2011.12.29 |
申请人 |
CHEIL INDUSTRIES INC. |
发明人 |
LEE, JONG HWA;CHO, HYUN YONG;CHUNG, MIN KOOK;JEONG, JI YOUNG;CHA, MYOUNG HWAN |
分类号 |
G03F7/039;C08G61/00;G03F7/004 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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