POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A power semiconductor device and a method for manufacturing the same are provided to increase the degree of integration of first and second electrodes by using a multilayer electrode pad for reducing the resistance between the first and second electrodes. CONSTITUTION: A second insulation layer (150) is divided to a third region and a fourth region. Third via electrodes are in contact with a first electrode pad. Fourth via electrodes are in contact with a second electrode pad. At least one third electrode pad is in contact with the third via electrodes. At least one fourth electrode pad (172) is in contact with the fourth via electrodes.