发明名称 Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate
摘要 The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps: a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face, b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate, c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face, d) putting a face of the target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support, e) removal of at least part of the intermediate support in order to obtain the said stacked structure.
申请公布号 US8481409(B2) 申请公布日期 2013.07.09
申请号 US20050233785 申请日期 2005.09.23
申请人 MORICEAU HUBERT;ASPAR BERNARD;JALAGUIER ERIC;LETERTRE FABRICE;COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 MORICEAU HUBERT;ASPAR BERNARD;JALAGUIER ERIC;LETERTRE FABRICE
分类号 H01L21/265;H01L21/30;H01L21/02;H01L21/301;H01L21/762;H01L27/12 主分类号 H01L21/265
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