发明名称 |
Multi-gas straight channel showerhead |
摘要 |
A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
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申请公布号 |
US8481118(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US201113181431 |
申请日期 |
2011.07.12 |
申请人 |
BURROWS BRIAN H.;TAM ALEXANDER;STEVENS RONALD;CHOI KENRIC T.;FELSCH JAMES D.;GRAYSON JACOB;ACHARYA SUMEDH;NIJHAWAN SANDEEP;WASHINGTON LORI D.;MYO NYI O.;APPLIED MATERIALS, INC. |
发明人 |
BURROWS BRIAN H.;TAM ALEXANDER;STEVENS RONALD;CHOI KENRIC T.;FELSCH JAMES D.;GRAYSON JACOB;ACHARYA SUMEDH;NIJHAWAN SANDEEP;WASHINGTON LORI D.;MYO NYI O. |
分类号 |
C23C16/00;C23C16/06;C23C16/08;C23C16/455 |
主分类号 |
C23C16/00 |
代理机构 |
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