| 摘要 |
PROBLEM TO BE SOLVED: To provide a discharge plasma generator capable of depositing a uniform and strong oxide film or nitride film on a wafer, by supplying active particles, in the form of a high density uniform flux, to a wide range (e.g., whole wafer of 300 mm) with a simple structure, and to provide a deposition method using the same.SOLUTION: The plasma generator includes a creeping discharge element including two sets of electrodes formed on a planar dielectric placed in a vacuum container and a dielectric (protective dielectric) provided to cover them. The plasma generator generates creeping discharge on the surface of the protective dielectric by applying a high frequency high voltage between the electrodes, and generates an active particle source progressing therefrom to the space. A substrate for electronic device is disposed to face the creeping discharge element, and creeping discharge plasma is generated by the gas supplied in these spaces. Thus, active particles are supplied to the surface of the substrate for electronic device, and a silicon film, an oxide film or a nitride film is deposited. |
