| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve resistance to radioactive ray by using a conductor plug which is formed in a hole and shields most of the radioactive ray. CONSTITUTION: A first insulating layer is formed on a semiconductor substrate. A capacitor is formed on the first insulating layer. A second insulating layer (29) is formed on the capacitor. The second insulating layer includes a hole including the whole area of an upper electrode (22a). A conductor plug (33) includes tungsten.</p> |
