METHOD FOR FABRICATING GALLIUM NITRIDE SUBSTRATE

摘要

PURPOSE: A method for manufacturing a gallium nitride substrate is provided to reduce the generation of crack by depositing a material having a large lattice parameter on a gallium nitride layer. CONSTITUTION: A gallium nitride layer (200) is grown on a base substrate (100). A compressive stress applying layer (300) is deposited in the Ga plane of the gallium nitride layer. The base substrate is separated from the gallium nitride layer. The compressive stress applying layer is removed from the Ga plane to form a free-standing GaN wafer.