NONVOLATILE MEMORY DEVICE, METHOD FOR OPERATING THE SAME, AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile memory device, a method for operating the same, and a method for fabricating the same are provided to improve the degree of integration by vertically laminating the memory cells on a substrate. CONSTITUTION: Channel structures are formed on a substrate. The channel structure includes interlayer dielectric and channel layers. A first and a second vertical gate (350,350') are contacted to the channel layers. A first word line (370) is connected to a first vertical gate. A second word line (370') is connected to a second vertical gate.