发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 PURPOSE: A substrate processing apparatus and a substrate processing method are provided to rapidly raise the temperature of a substrate by appropriately supplying a first and a second gas. CONSTITUTION: A substrate holding part maintains a substrate. A first processing solution nozzle (61) supplies a first processing solution to the periphery part of the substrate. A second processing solution nozzle (62) supplies a second processing solution to the periphery part of the substrate. A first gas supply device (51) supplies a first gas to the periphery part of the substrate. A second gas supply device (42) supplies a second gas to the substrate.
申请公布号 KR20130076735(A) 申请公布日期 2013.07.08
申请号 KR20120152923 申请日期 2012.12.26
申请人 TOKYO ELECTRON LIMITED 发明人 NAMBA HIROMITSU;FITRIANTO;TOKUNAGA YOICHI;AMANO YOSHIFUMI
分类号 H01L21/306 主分类号 H01L21/306
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