发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
PURPOSE: A substrate processing apparatus and a substrate processing method are provided to rapidly raise the temperature of a substrate by appropriately supplying a first and a second gas. CONSTITUTION: A substrate holding part maintains a substrate. A first processing solution nozzle (61) supplies a first processing solution to the periphery part of the substrate. A second processing solution nozzle (62) supplies a second processing solution to the periphery part of the substrate. A first gas supply device (51) supplies a first gas to the periphery part of the substrate. A second gas supply device (42) supplies a second gas to the substrate. |
申请公布号 |
KR20130076735(A) |
申请公布日期 |
2013.07.08 |
申请号 |
KR20120152923 |
申请日期 |
2012.12.26 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NAMBA HIROMITSU;FITRIANTO;TOKUNAGA YOICHI;AMANO YOSHIFUMI |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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