VERTICAL BJT AND SCR FOR ESD

摘要

PURPOSE: A vertical BJT and SCR for ESD are provided to increase area density by using fin field-effect transistors (FET). CONSTITUTION: A well region is made of a semiconductor material of a first doping type. A floating base (14) is made of a semiconductor material of a second doping type. The floating base is vertically arranged on the well region. A first terminal receiving region (16) is vertically arranged on the floating base. A second terminal receiving region (18) is made of a semiconductor material of a third doping type.