| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing single crystal silicon, whereby the occurrence of dislocation in the single crystal silicon can be reduced when growing the single crystal silicon by a multi-pulling method whereby a plurality of single crystal silicons is pulled up from a raw material melt in the same crucible.SOLUTION: The method for producing single crystal silicon involves producing the single crystal silicon 1 by a multi-pulling method whereby a plurality of single crystal silicons 1 is pulled up from the raw material melt 7 in the same crucible 8 in a chamber by the Czochralski method. The method comprises a step of separating the single crystal silicon from the raw material melt by skipping formation of at least a portion of a tail part of the single crystal silicon 1, wherein the amount of barium added to form a layer on an inner wall of the crucible 8 is controlled so that it falls within a prescribed range. |
