| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can improve yield by inhibiting damages to a substrate.SOLUTION: A semiconductor substrate manufacturing method comprises the steps of :forming a first interlayer insulation film on a substrate; forming a first protection film in a peripheral edge of the first interlayer insulation film; forming a plurality of fist trenches in the first interlayer insulation film after forming the first protection film; filling the plurality of first trenches and forming a conductive layer to cover the first interlayer insulation film; and polishing at least a part of the conductive layer, which is exposed on the first interlayer insulation film to form a first wiring layer. By forming the first protection film on the peripheral edge of the first interlayer insulation film before forming the first trenches, surface smoothness at the peripheral edge of the first interlayer insulation film is easy to be kept, and excessive polishing of the substrate peripheral part in the polishing process is inhibited. |
