| 摘要 |
PROBLEM TO BE SOLVED: To provide a distributed-feedback nitride semiconductor photonic crystal laser manufacturing method, which can improve stress-strain distribution on a surface of an obstructed part though upper parts of pores in an InGaN layer are obstructed in a heat treatment process by mass transport; and which can also improve a distribution of peak wavelength of a gain spectrum in an active layer above the InGaN layer.SOLUTION: The distributed-feedback nitride semiconductor photonic crystal laser manufacturing method comprises the steps of: preparing a nitride semiconductor structure in which a semiconductor layer, an InGaN layer and a GaN layer are sequentially formed on a substrate by crystal growth; forming on a principal surface on the GaN layer side, pores periodically arranged in an in-plane direction and piercing the GaN layer in a vertical direction to reach the InGaN layer; heat processing the nitride semiconductor structure in an atmosphere containing nitrogen elements at a heat treatment temperature of 950°C and over to produce mass transport and obstruct upper parts of the pores by atoms transferring from the GaN layer to form a photonic crystal in the InGaN layer; and forming an active layer by crystal growth on the GaN layer which obstructs the upper parts of the pores. |
