| 摘要 |
PROBLEM TO BE SOLVED: To provide an interconnection formation method capable of etching a metal oxide layer selectively, and to provide etchant.SOLUTION: An interconnection formation method for forming an interconnection including a metal oxide layer and a copper layer includes an etching step for etching the metal oxide layer by bringing etchant into contact with a part where a conductor pattern of the metal oxide layer having a conductor pattern including a copper layer formed on the surface is not laminated. The metal oxide layer contains oxides of one or more kinds of metal selected from the group consisting of zinc, tin, aluminum, indium and gallium, and the etchant is an acidic aqueous solution containing a thiocarbonyl compound and halide ions. |
