| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method capable of reducing a resistivity of TiN.SOLUTION: The film deposition method includes a step of mounting a substrate on a substrate mounting portion of a turntable which is rotatably provided in a vacuum chamber; a step of depositing titanium nitride on the substrate by alternately exposing the substrate mounted on the turntable to a titanium containing gas and a nitrogen containing gas which is capable of reacting with the titanium containing gas while rotating the turntable; and a step of exposing the substrate on which the titanium nitride is deposited to the nitrogen containing gas, the film depositing step and the exposing step being continuously repeated to solve the problem to be solved. |
