| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a large-sized polycrystalline silicon ingot where the decrease of the crystal defect density and crack prevention are easily performed at a low cost and to provide the polycrystalline silicon ingot obtained by the method, and its applications.SOLUTION: The method for producing the polycrystalline silicon ingot which is produced by solidifying molten silicon in a crucible by unidirectional solidification to an upper direction from the bottom of the crucible is characterized by including obtaining the polycrystalline silicon ingot by solidifying the molten silicon by the unidirectional solidification in conditions in which the time to lower temperature at a temperature changing rate of more than 7°C/h and 10°C/h or below exists while a detecting temperature is lowered from (Tm-20)°C to (Tm-60)°C, wherein Tm is the detecting temperature in the vicinity of the center of the bottom of the crucible when the temperature of the silicon reaches the melting point of the silicon. |
