发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress the plasma potential by reducing the effective inductance of an antenna in an induction coupling plasma processing apparatus, and to generate plasma of larger area having two-dimensional plasma density distribution of high uniformity.SOLUTION: An antenna 30 having a straight planar shape comprises reciprocating conductors 31, 32 which are arranged to be close each other in a vertical direction Z. High frequency currents Iflow in the reciprocating conductors 31, 32 in a reverse direction with each other. An interval D in the vertical direction Z between the reciprocating conductors 31, 32 is made small in the central part of the antenna in the longitudinal direction X, and made large at both ends. A plurality of such antennas 30 are arranged in parallel. A length N of a region Ahaving a small interval D in the central part of each antenna is made large in the central part of the arrangement direction Y, and made small at both ends.
申请公布号 JP2013134835(A) 申请公布日期 2013.07.08
申请号 JP20110283126 申请日期 2011.12.26
申请人 NISSIN ELECTRIC CO LTD;JAPAN STEEL WORKS LTD:THE 发明人 ANDO YASUNORI;IRISAWA KAZUHIKO;YONEDA HITOSHI;MASHITA TORU;UCHIDA RYOHEI;CHIBA MASAKI
分类号 H05H1/46;C23C16/505;H01L21/205;H01L21/3065 主分类号 H05H1/46
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