POWER DEVICES AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A power device and a method for manufacturing the same are provided to reduce leakage current by forming a regrowth GaN layer in a silicon carbide layer. CONSTITUTION: A silicon carbide layer (210) is formed on one surface of a substrate. A part of the silicon carbide layer is etched. A regrowth GaN layer is grown on an etched part. A first electrode (400) is formed on the silicon carbide layer. A second electrode (500) is formed on the other surface of the substrate.