发明名称 LOCALIZED SURFACE PLASMON RESONANCE SENSOR USING CHALCOGENIDE MATERIALS AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A local surface plasmon resonance (LSPR) sensor using a chalcogenide material and a manufacturing method thereof are provided to control a composition ratio of a chalcogenide material forming an LSPR excitation layer, thereby variously changing the carrier concentration of the LSPR excitation layer. CONSTITUTION: An LSPR sensor using a chalcogenide material includes an LSPR excitation layer formed of a chalcogenide material. The chalcogenide material includes a first material and a second material. The first material includes at least one among selenium and tellurium. The second material includes at least one among germanium and antimony.
申请公布号 KR20130076189(A) 申请公布日期 2013.07.08
申请号 KR20110144676 申请日期 2011.12.28
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE, TAEK SUNG;LEE, KYEONG SEOK;KIM, IN HO;LEE, WOOK SEONG;JEONG, DOO SEOK;KIM, WON MOK;CHEONG, BYUNG KI
分类号 G01N21/27;G01N21/55 主分类号 G01N21/27
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