| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor layer having high photoelectric conversion efficiency, and a photoelectric conversion device.SOLUTION: A raw material for forming a semiconductor layer contains metal chalcogenide particles and a diphenylamine-based compound. A method for manufacturing a photoelectric conversion device comprises the steps of: forming a film on an electrode layer 2 by using the raw material for forming a semiconductor layer, which contains the metal chalcogenide particles and the diphenylamine-based compound; heating the film to form a first semiconductor layer 3; and forming a second semiconductor layer 4 different in conductivity type from the first semiconductor layer 3, on the first semiconductor layer 3. |
