SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device including a fine pattern.SOLUTION: A semiconductor device manufacturing method according to an embodiment includes the steps of: forming a first side wall film 71 having a first line width LW1 on a side face of a core material 65 including a line part 651 and a fringe 652; forming a mask 81A on the first side wall film 71 on the fringe 652 and on the side face of the fringe 652; removing the core material 65 so that a first residue part is formed below the mask 61A; forming a second side wall film opposed at a first interval of not more than the first line width in a first region and opposed at a second interval larger than the first interval in a second region on a side face of a pattern corresponding to the pattern of the first side wall film and the pattern of the residue part; and processing a processed layer on the basis of the second side wall film, and forming plural distribution lines adjacent at the first interval in the first region and adjacent at the second interval in the second region.