| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor capable of inhibiting voltage fluctuation in a high-frequency band.SOLUTION: A semiconductor device comprises a capacitor including: a first semiconductor region 2 of a first conductivity type; a second semiconductor region 3 of the first conductivity type formed on the first semiconductor region 2 of the first conductivity type and having a first conductivity type impurity concentration higher than that of the first semiconductor region 2 of the first conductivity type; a semiconductor region 4 of a second conductivity type formed on the second semiconductor region 3 of the first conductivity type; a dielectric film 5 formed on the semiconductor region 4 of the second conductivity type; and an upper electrode 7a formed on the dielectric film 5. |
