| 摘要 |
PROBLEM TO BE SOLVED: To improve a withstand voltage of an LDMOS transistor while separating a source and a sub-electrode portion.SOLUTION: A MOS transistor includes: a p-type drain 30 provided in a Drain-P-well of a semiconductor substrate; a p-type source 40 provided in a Body-N-well adjacent to the Drain-P-well; a gate 20 provided on the semiconductor substrate ao as to straddle between end portions of the Drain-P-well and the Body-N-well; an n-type sub-electrode portion 50 provided more apart from the gate 20 than the source 40 in the Body-N-well; a first separation portion 61 provided in the Drain-P-well and separating the gate 20 and a drain 30; and a second separation portion 70 provided on the semiconductor substrate so as to separate the source 40 and the sub-electrode portion 50. |
