| 摘要 |
PURPOSE: An additive for resist is provided to suppress a leaching from water during immersion lithography by enhancing a hydrophobicity of a resist film surface, convert to have hydrophilicity according to a deprotection reaction in a developing process. CONSTITUTION: An additive for a resist is indicated as below chemical formula 1, R', R" and R"' are respectively selected from a group consisting of a hydrogen, a C1-4 alkyl group, and a C1-4 halo alkyl group in which one among the halogen group and the hydrogen atom is substituted to a halogen group, the R1 and R2 are respectively and independently the hydrogen or the C1-8 alkyl group, R3 is the hydrogen atom or a functional group having a structure of following chemical formula 2. Additionally, the resist composition comprises the additive for resist, a base polymer for resist, and an acid generator, and solvent. |
