| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode with a high recovery resistance having a deep region.SOLUTION: In a diode having a semiconductor substrate, the semiconductor substrate comprises: a p-type anode region formed in a range exposed to an upper face of the semiconductor substrate; a p-type deep region formed in the range exposed to the upper face, coupled with an anode region, and expanded to a deeper position than the anode region; an outer peripheral region between an end of the semiconductor substrate and the deep region; and an n-type cathode region expanding to lower sides of the anode region and the deep region and in the outer peripheral region. An average p-type impurity concentration in the deep region on a side near the anode region is lower than an average p-type impurity concentration in the deep region on the side near the outer peripheral region. |
