| 摘要 |
PROBLEM TO BE SOLVED: To provide an ingot, a substrate, and a substrate group each of which is made of silicon carbide and is capable of suppressing variation in characteristics of semiconductor devices.SOLUTION: The ingot 1 is made of single crystal silicon carbide, and has a p-type impurity. The ingot 1 has a thickness of 10 mm or greater in a growth direction thereof. Further, the ingot 1 has an average carrier density of 1×10cmor greater. Further, the ingot 1 has a carrier density fluctuating in the growth direction by ±80% or lower relative to the average carrier density. |
