发明名称 IMPROVEMENT OF ETCH RATE UNIFORMITY USING THE INDEPENDENT MOVEMENT OF ELECTRODE PIECES
摘要 A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a bottom grounded extension adjacent to and substantially encircling the bottom electrode. The top grounded extension adjacent to and substantially parallel to the top electrode. The top electrode is also grounded. The top grounded extension is capable of being independently raised or lowered to extend into a region above the bottom grounded extension.
申请公布号 KR101283830(B1) 申请公布日期 2013.07.08
申请号 KR20077029150 申请日期 2006.06.12
申请人 发明人
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
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