| 摘要 |
<p>PURPOSE: A method for manufacturing an oxide semiconductor thin film transistor is provided to improve productivity by simultaneously patterning an active layer, a source electrode, and a drain electrode through one mask. CONSTITUTION: A gate electrode (15) is formed on a substrate (11). A gate insulation layer (18) is formed on the front surface of the substrate. An oxide semiconductor layer is formed on the front surface of the gate insulation layer. An etch stopper layer (25) is formed on the oxide semiconductor layer which is located on the upper side of the gate electrode. An active layer (24) is formed on the gate electrode, and a source electrode (36) and a drain electrode (38) are formed at the same time.</p> |
