| 摘要 |
A method for manufacturing a semiconductor device includes providing a template having openings on upper surface, channels for receiving plating solution and connecting from the openings to lower surface of the template, and electrodes in positions corresponding to the channels on the lower surface and extending to the openings through the channels, positioning a substrate having circuits on upper surface of the substrate and through holes penetrating through the substrate and connected to circuit electrodes of the circuits such that the upper surface of the substrate faces downward, coupling the template and substrate such that the holes are positioned to correspond with the openings, supplying plating solution from the channels to the holes, and applying voltage between the circuit electrodes as cathodes and electrodes as anodes such that through-hole electrodes are formed in the holes and that the circuit electrodes are connected to the electrodes. |
