发明名称 CMP slurry composition for polishing metal wiring and polishing method using the same
摘要 PURPOSE: A CMP slurry composition for grinding metal wires with the low surface defect is provided to secure the fast polishing time, and to reduce the surface defect including the erosion and the dishing. CONSTITUTION: A CMP slurry composition for grinding metal wires contains ultrapure water, an abrasive, an oxidizer, and a pH adjusting agent. The abrasive uses 0.5~3wt% of colloid silica with the first diameter of 30~70 nanometers for the total amount of slurry composition. The oxidizer contains 0.1~5wt% of peroxy compound selected from the group consisting of hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide, and ammonium peroxide. The pH of the CMP slurry composition is 2.3~3.
申请公布号 KR101279963(B1) 申请公布日期 2013.07.05
申请号 KR20080133805 申请日期 2008.12.24
申请人 发明人
分类号 C09K3/14 主分类号 C09K3/14
代理机构 代理人
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