NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A method for manufacturing a nitride semiconductor device is provided to improve contact resistance in an ohmic contact by forming the ohmic contact after an n-type GaN layer of high concentration is formed on the lower sides of a source electrode and a drain electrode. CONSTITUTION: A substrate is prepared (S110). A nitride epitaxial layer is formed on the substrate (S120). An n-type nitride layer is formed on the upper side of the nitride epitaxial layer (S130). A source electrode and a drain electrode are formed on the upper side of the n-type nitride layer (S140). The n-type nitride layer is etched (S150). An ohmic contact is formed on the source electrode and the drain electrode by a thermal process (S160). A metal layer is deposited in a gate area (S170). [Reference numerals] (AA) Start; (BB) Finish; (S110) Prepare a substrate; (S120) Form an epitaxial layer (AlxGAl-xN/GaN/transition layer); (S130) Form an n-type nitride layer; (S140) Form an ohmic metal layer in a source/drain region; (S150) Etch an n-type nitride layer; (S160) Form an ohmic contact through a thermal process; (S170) Deposit a metal layer in a gate area