SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to secure stable electrical characteristics by using oxide semiconductor. CONSTITUTION: A gate insulating layer is arranged on a gate electrode layer. An oxide semiconductor layer (403) is arranged on the gate insulating layer. A source electrode layer (405a) is electrically connected to the oxide semiconductor layer. A drain electrode layer (405b) is electrically connected to the oxide semiconductor layer. A metal oxide layer is contacted with the upper part of an insulating layer.