METHOD OF GROWING GAN LAYER ON GRAPHENE LAYER AND LIGHT EMITTING DEVICE USING GAN LAYER ON GRAPHENE LAYER

摘要

PURPOSE: A method for growing a GaN layer on a graphene layer and a light emitting device using the GaN layer on the graphene layer are provided to form a GaN crystal layer of high quality without damaging the graphene layer by previously forming a GaN buffer layer on the graphene layer in a low temperature process. CONSTITUTION: A graphene layer (12) is formed on a substrate (11). A Ga seed is formed on the graphene layer. A GaN buffer layer (13) is formed on the Ga seed in a first temperature range. A GaN crystal layer (14) is grown on the GaN buffer layer in a second temperature range. A second electrode pad is formed on the upper surface of the GaN crystal layer.