发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: A substrate processing apparatus and a method for manufacturing a semiconductor device are provided to facilitate a maintenance operation and to prevent the adsorption of a non-reactive gas in a pipe. CONSTITUTION: A main part is arranged in a container body. A pod stage (18) is arranged in the front surface of the container body. A pod (16) is transferred to the pod stage. The pod receives a wafer. A pod transfer device (20) faces the pod stage.</p>
申请公布号 KR20130075677(A) 申请公布日期 2013.07.05
申请号 KR20120151771 申请日期 2012.12.24
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 KOSHI YASUNOBU;SUZAKI KENICHI;YOSHINO AKIHITO
分类号 H01L21/02 主分类号 H01L21/02
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