| 摘要 |
According to one embodiment, a semiconductor light emitting device includes a light emitting chip (5) and a fluorescent material layer (28). The light emitting chip includes a semiconductor layer (15), a first electrode (16), a second electrode (17), an insulating layer (18), a first interconnect layer (21), a second interconnect layer (22), a first metal pillar (23), a second metal pillar (24), and a resin layer (25). The semiconductor layer includes a light emitting layer (12), a first major surface (15a), and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer (28) is provided on the first major surface (15a) and has a larger planer size than the light emitting chip (5). |
