发明名称 |
METHOD FOR MANUFACTURING NANOWIRE |
摘要 |
PROBLEM TO BE SOLVED: To form nanowire of a group III-V compound on graphene.SOLUTION: In a step S101, metallic particulates 102 are formed on graphene 101. Graphene 101 may be formed on a substrate 103 composed of SiC having, e.g., a main surface of (0001) by a thermal decomposition method. In a step S102, a nanowire 104 of the group III-V compound is formed by an organometallic vapor phase growing method using the metallic particulates 102 as a catalyst (nanowire formation step). For instance, the nanowire 104 composed of GaP can be formed by the organometallic vapor phase growing method for supplying Ga source gas and P source gas. |
申请公布号 |
JP2013129548(A) |
申请公布日期 |
2013.07.04 |
申请号 |
JP20110278258 |
申请日期 |
2011.12.20 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
TATENO KOTA;SHO KOKUKYO;SASAKI SATOSHI;HIBINO HIROKI |
分类号 |
C01B25/08;B01J23/52;B82Y20/00;B82Y30/00;B82Y40/00;C01G28/00;H01L31/04;H01L31/10;H01L33/04 |
主分类号 |
C01B25/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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