| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate improving the yield of a semiconductor device.SOLUTION: The semiconductor substrate 10 has a principal surface 1, and comprises a single crystal silicon carbide. The principal surface 1 includes a central region 3 which is the area excluding an area within 5 mm from the outer periphery 2. When the central region 3 is divided into square regions 4 having a side of 1 mm, density of dislocation, including a component where Burgers vector is parallel to <0001> direction and a component where Burgers vector is parallel to <11-20> direction, is ≤1×10cm, in any square region 4. |
