| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate surface etching apparatus which is adaptable to mass production while ClF3, XeF2, BrF3, and BrF5 gases are used; a semiconductor substrate surface etching method for forming asperities on a surface of the substrate by use of the apparatus; and a gas nozzle unit.SOLUTION: The semiconductor substrate surface etching apparatus comprises: a reaction chamber arranged so that the pressure inside it can be reduced to an atmospheric pressure or below; a moving stage to put a semiconductor substrate on, which can be moved in the reaction chamber; a nozzle for blowing an etching gas against a surface of the semiconductor substrate put on the moving stage, provided that the etching gas contains at least one kind of gas selected from the group consisting of ClF3, XeF2, BrF3, and BrF5; and a nozzle for blowing a cooling gas containing a nitrogen gas or an inert gas against the semiconductor substrate put on the moving stage. |
