发明名称 |
THROUGH-SILICON VIA STRUCTURE FORMATION PROCESS |
摘要 |
In a process, an opening is formed to extend from a front surface of a semiconductor substrate through a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A block layer is formed on only a portion of the metal seed layer. A metal layer is formed on the block layer and the metal seed layer to fill the opening. |
申请公布号 |
US2013171772(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201313775983 |
申请日期 |
2013.02.25 |
申请人 |
LIN YUNG-CHI;WU WENG-JIN;SHUE SHAU-LIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN YUNG-CHI;WU WENG-JIN;SHUE SHAU-LIN |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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