| 摘要 |
A method and test circuit for electrically measuring the critical dimension of a fin of a FinFET is disclosed. The method comprises measuring the resistance of a first gate test structure, measuring the resistance of a second gate test structure, computing a linear equation relating sheet resistance to gate width, computing a Y intercept value of the linear equation to derive an external resistance value, computing a sheet resistance value for the first gate test structure based on the external resistance value, measuring the resistance of a doped fin test structure, and computing a critical dimension of a fin based on the sheet resistance value. |
