发明名称 |
Combinatorial Processing Using High Deposition Rate Sputtering |
摘要 |
Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.
|
申请公布号 |
US2013167773(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201113339648 |
申请日期 |
2011.12.29 |
申请人 |
YANG HONG SHENG;HONG ZHENDONG;LANG CHI-I;INTERMOLECULAR INC. |
发明人 |
YANG HONG SHENG;HONG ZHENDONG;LANG CHI-I |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|