发明名称 SILICON CARBIDE POWDER PRODUCTION METHOD
摘要 According to one embodiment of the present invention, the silicon carbide powder production method comprises the steps of: forming a mixture by mixing a silicon source (Si source), a carbon source (C source) comprising a solid carbon source or gaseous carbon source, and a silicon dioxide source (SiO2 source); and reacting the mixture. The mole ratio of silicon dioxide comprised in the silicon dioxide source with respect to the sum of the silicon comprised in the silicon source and carbon comprised in the carbon source is between 0.01:1 and 0.3:1.
申请公布号 WO2013100693(A1) 申请公布日期 2013.07.04
申请号 WO2012KR11712 申请日期 2012.12.28
申请人 LG INNOTEK CO., LTD. 发明人 KIM, BYUNG SOOK
分类号 C01B31/36;C01B31/04;C01B33/113 主分类号 C01B31/36
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