发明名称 |
OPTICAL PROXIMITY CORRECTION METHOD |
摘要 |
<p>An optical proximity correction method, based on an optical proximity correction process. By adding a step of determining and modifying an indentation when performing an OPC processing on a metal line, a concave-convex structure in the metal line is able to achieve the optimal indentation when an OPC correction is performed, thus deformation and deviation found between a mask graphic and a photolithography graphic acquired on an actual silicon wafer are reduced, thereby improving the circuit performance of a product and the production yield.</p> |
申请公布号 |
WO2013097541(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
WO2012CN83723 |
申请日期 |
2012.10.30 |
申请人 |
CSMC TECHNOLOGIES FAB2 CO., LTD. |
发明人 |
CHEN, JIE;WANG, CHING-HENG;ZHANG, LEI;WAN, JINYIN |
分类号 |
G03F1/36 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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