发明名称 OPTICAL PROXIMITY CORRECTION METHOD
摘要 <p>An optical proximity correction method, based on an optical proximity correction process. By adding a step of determining and modifying an indentation when performing an OPC processing on a metal line, a concave-convex structure in the metal line is able to achieve the optimal indentation when an OPC correction is performed, thus deformation and deviation found between a mask graphic and a photolithography graphic acquired on an actual silicon wafer are reduced, thereby improving the circuit performance of a product and the production yield.</p>
申请公布号 WO2013097541(A1) 申请公布日期 2013.07.04
申请号 WO2012CN83723 申请日期 2012.10.30
申请人 CSMC TECHNOLOGIES FAB2 CO., LTD. 发明人 CHEN, JIE;WANG, CHING-HENG;ZHANG, LEI;WAN, JINYIN
分类号 G03F1/36 主分类号 G03F1/36
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