A THIN FILM TRANSISTOR AND A MAKING METHOD THEREOF

摘要

PURPOSE: A thin film transistor and a method for manufacturing the same are provided to improve field effect mobility and optimize threshold voltage. CONSTITUTION: A gate electrode (110) is formed on a substrate. A gate dielectric layer (120) covering the gate electrode is formed on the substrate. A channel layer (130) is formed on the gate dielectric layer. An etch stop layer (140) is formed on the channel layer. A first electrode (155a) is formed in one side of the channel layer and the gate electrode. A second electrode (155b) is formed in the other side of the channel layer and the gate electrode.