| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method and an etching device capable of etching a substrate into a desired shape.SOLUTION: A method for etching a base material containing at least one of semiconductors including silicon, silicon carbide, and an elements of groups III to V as a main material comprises the steps of: bringing a process liquid 105 into contact with a base material 101; bringing an etching member 102 including a core material 121 having a magnetic material and a catalyst layer 122 coating a surface of the core material 121 into contact with the base material 101 while maintaining the state of the preceding step; and dissolving a part in contact with the etching member 102 of the base material 101 in the process liquid 105 by oxidizing the contact part and etching the base material 101 in a magnetic field direction while moving the contact part by making the electric field act on the etching member 102 and moving the etching member 102 in the magnetic field direction. |
